It is known that the electrochemistry of silicon in alkaline solution is closely linked to the anisotropic etching of the semiconductor. In this work the influence of two commonly used additives, hydrogen peroxide and isopropyl alcohol, on the surface chemistry of silicon in KOH solution was investigated by electrochemical methods. The results allow us to draw conclusions regarding the role of the additives in the chemical and electrochemical reactions. (C) 2008 Elsevier Ltd. All Fights reserved.