The chemical vapor deposition (CVD) of titanium nitride (TiN) thin film has been a widely adopted, process for the fabrication of diffusion barrier layers in microelectronic fabrication processes. TiCl4(NH3)(2) is known to be formed as a solid product in the downstream of the CVD chambers and causes damages to the pumping systems. To prevent such damage, trap systems are installed between the process chamber and pumps. This study focuses on the flow, temperature, and reaction kinetic modeling of the chemical fort-nation of TiCl4(NH3)(2) in the trap system by computational fluid dynamics (CFD). The simulation results showed good agreement with the experimental data at temperatures below 120 degrees C. The deposition rate of TiCl4(NH3)(2) is found to increase with increasing temperature of the trap body, and the activation energy determined from the experiments suggests that the chemical vapor deposition of TiCl4(NH3)(2) is surface-reaction-controlled.