A detailed numerical simulation for electron-beam heating of n-doped silicon is presented. Electron-beam penetration is modeled using electron-beam transport equation (EBTE). The EBTE is solved by using a Monte Carlo (MC) method to determine the electron deposition distributions, including electron density deposition and optical phonon generation. Electron and phonon temperatures of the film are then determined using electron-phonon hydrodynamic equations (EPHDEs) coupled with the deposition distributions obtained from the MC simulation. The combined EBTE and EPHDEs results indicate that an electron beam creates a depletion region near the surface of incidence and causes non-equilibrium between electron and phonon temperatures. (C) 2009 Elsevier Ltd. All rights reserved.