Plasma Enhanced Chemical Vapor Deposition (PECVD) of TiO2 thin films on silica gel powders at atmospheric pressure in a Circulating Fluidized Bed (CFB) reactor was carried out. In addition, TiO2 thin films on silica gel powders were prepared by the sol-gel method and compared with the TO2-deposited powders by PECVD. The characteristics of those thin films were determined by X-ray diffraction spectra, Raman spectroscopy, SEM and BET. Without heat treatment, anatase phase was crystallized well by PECVD in a CFB reactor. Specific surface area of the TiO2-deposited silica gel by PECVD exhibits a larger value than that by the sol-gel method. By the PECVD method, TiO2 thin films are uniformly deposited on the external surface of silica gel.