Titanium oxide (TiO2) thin films were grown oil Si(100) substrates using the chemical vapor deposition (CVD) of titanium tetra isopropoxide (TTIP; Ti(OCH(CH3)(2))(4)). The distribution of the growth rate in the reactor and the step coverage of films grown in the range 593-1173 K could was using our "simple reaction model." The TTIP changed into TiO2 directly via a surface reaction. The surface reaction rate constant was determined by comparing the step coverage or grown and simulated films. The activation energy of the surface reaction was 212 kJ/mol (T < 710) K).