CdTe films were deposited on anti mony-treated (100) GaAs substrates by low-pressure metalorganic vapor phase epitaxy. Prior to growth of CdTe layer, GaAs substrates were treated by triethylantimony for various treatment times. The effect of antimony treatment on crystal orientation of CdTe layer was discussed. At the optimum treatment time, CdTe films were oriented to (110 0) and their in-plane X-ray measurements show fourfold symmetries, that is, it is found that CdTe film was epitaxially grown on antimony-treated (100) GaAs substrate. (c) 2008 Elsevier B.V. All rights reserved.