Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy

Siekacz M; Feduniewicz-Zmuda A; Cywinski G; Krysko M; Grzegory I; Krukowski S; Waldrip KE; Jantsch W; Wasilewski ZR; Porowski S; Skierbiszewski C

Journal of Crystal Growth, Vol.310, No.17, 3983-3986, 2008

DOI10.1016/j.jcrysgro.2008.06.011 Export Citation

Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy

Siekacz M, Feduniewicz-Zmuda A, Cywinski G, Krysko M, Grzegory I, Krukowski S, Waldrip KE, Jantsch W, Wasilewski ZR, Porowski S, Skierbiszewski C

In this work, we report on the growth of InGaN layers and InGaN/InGaN multi-quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PAMBE). We show that the incorporation of indium in InGaN layers can be controlled either by the ratio of Ga to N flux or the growth temperature. A method to increase the internal quantum efficiency of MQWs emitting green light at 500 nm by optimizing the growth temperature for the In content of each individual layer is proposed. (c) 2008 Elsevier B.V. All rights reserved.

Keywords:low dimensional structures;nitrides;semiconducting III-V materials;molecular beam epitaxy