화학공학소재연구정보센터
Journal of Crystal Growth, Vol.310, No.18, 4054-4057, 2008
Structural and photoluminescence properties of single-crystalline In2O3 films grown by metal organic vapor deposition
Single-crystalline In2O3 thin films were obtained on alpha-Al2O3 (0 0 0 1) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The structural, optical and photoluminescence (PL) properties of the In2O3 films were investigated in detail. The sample prepared at 650 degrees C exhibited best crystal quality with body-centered cubic (bcc) structure of pure In2O3. The average transmittance for the films in the visible spectral range exceeded 85%. A single and sharp ultra-violet PL peak near 337 nm was observed at room temperature (RT). The corresponding PL mechanisms were investigated. (C) 2008 Elsevier B.V. All rights reserved.