InP/GalnP quantum dots emitting in the red spectral range have been grown on an AlGaAs distributed Bragg reflector in order to increase the single-photon emission efficiency. We have observed an increase in ensemble photoluminescence by a factor of 28 in comparison to the reference lnP/GalnP quantum dots grown without such a reflector underneath. Photon correlation measurements performed under pulsed excitation show a clear antibunching behavior (g((2))(0) = 0.17) as expected for a single-photon emitter. Using aluminum containing barriers to surround the quantum dots the ensemble luminescence intensity could be increased by a factor of 500 at 240 K in comparison to the reference sample at 240 K (C) 2008 Elsevier B.V. All rights reserved