Wideband wavelength electroluminescence (EL) more than 400 nm was obtained in self-assembled Stranski-Krastanov (S-K) InAs/InP quantum dots (QDs) grown by selective area low-pressure metalorganic vapor-phase epitaxy (MOVPE). We used two techniques to control the EL peak spectrum in order to obtain the wideband emission spectrum of the device. One is selective area growth using a SiO2 narrow 16-stripe mask array pattern, and the other is a double-cap procedure in the growth of the QDs layer to change the height of QDs layer by layer. (C) 2008 Elsevier B.V. All rights reserved.