We demonstrate the growth of InP/GaInP quantum dots on a low density InAs/GaAs island seed layer (10(7) cm(-2)) by metal-organic vapor phase epitaxy. The strain produced by the underlying InAs islands results in a distinct bimodal size distribution of the InP/GaInP quantum dot layer where large dome shaped structures and small quantum dots could be observed using atomic force microscopy. Using mu-photoluminescence only luminescence from the small high energetic InP-QDs could be recorded with emission linewidths of around 140 mu eV. Autocorrelation measurements confirmed the zero dimensionality of the InP quantum dots. (C) 2008 Elsevier B.V. All rights reserved.