We demonstrate the growth of electrically driven InP/AlGaInP quantum dots embedded in a p-i-n diode structure emitting in the red to orange spectral region at room temperature. We observed an increase in emission wavelength by decreasing the quantum dot growth temperature from 710 down to 670 degrees C. Due to the decreased diffusion length the incorporation of Al from the AlGaInP barrier into the InP quantum dots is reduced and results in a strong red shift of the electroluminescence of up to 95 nm (620-715 nm). Electrically driven photon correlation measurements (5 K) performed on a single quantum dot under continuous current show a clear antibunching behavior (g((2))(0) = 0.41) as expected for a single-photon emitter. (C) 2008 Elsevier B.V. All rights reserved