Low-temperature crystallization of amorphous Si (a-Si) has been investigated by employing alternating magnetic field. Even at 430 degrees C, with the aid of magnetic field that was applied in the perpendicular direction to a-Si films without any metal catalyst and electrical contact, crystalline structure of the Si films was changed from amorphous to polycrystalline. The evaluated crystal fraction of the polycrystalline Si (poly-Si) was about 90% and twin boundaries were observed in the poly-Si films. Thin-film transistors using poly-Si fabricated by applying the alternating magnetic field showed superior drain current uniformity of below +/- 7% due to the smooth grain boundary without protrusion. The method using alternating magnetic field represents an excellent approach to the fabrication of uniform switching electronics for flat panel displays. (C) 2008 Elsevier B.V. All rights reserved.