화학공학소재연구정보센터
Journal of Crystal Growth, Vol.311, No.3, 526-529, 2009
Crystal growth and structural characterizations of Ce-doped Gd-9.33(SiO4)(6)O-2 single crystals
A new type of scintillator crystal, Ce-doped Gd-9.33(SiO4)(6)O-2 (Ce:GSAP), was grown by the micro-pulling-down (mu-PD) method. Single-crystal structural analysis coupled with X-ray absorption near-edge structure (XANES) analysis clearly implied the preference of Ce3+ at the 6h site in the Ce:GSAP structure. The X-ray excited luminescence spectra showed a peak around 410 nm originating from the Ce3+ 5d-4f transition. The corresponding decay time estimated was about 25 ns. (C) 2008 Elsevier B.V. All rights reserved.