Journal of Crystal Growth, Vol.311, No.3, 719-721, 2009
Specific surface free energy and etch pit density of synthesized quartz crystal
The specific surface free energy of growing faces of the synthetic quartz crystal, S, Z, +X, and -X faces was experimentally obtained using contact angle of water and formamide droplets oil the crystal surfaces. I lie anisotropy of the Specific surface free energy of the growing faces was explained by the difference of the steps on the faces, which originates front dislocations. In order to investigate the presence of the dislocation, the surface of the crystal was treated to form etch pits. The face with larger specific surface free energy has large density of etch pits, which suggests that the Surface with high specific surface free energy has large number of steps originating from defects. (c) 2008 Elsevier B.V. All rights reserved.