The photoconductivity phenomenon in GaMnAs grown via low temperature molecular beam epitaxy has been Studied as a function of temperature and light intensity. Persistent photoconductivity (PPC) at temperature lower than 100 K has been observed. It was shown that the photoconductivity behavior of GaMnAs depends on the crystalline quality of the epitaxial layers. The origin of photoconductivity effects in the investigated samples are discussed. (C) 2008 Elsevier B.V. All rights reserved.