We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, Kondo effect was observed when strong coupling between the electrodes and the QD was realized using a large QD with a diameter of similar to 100nm. From the temperature dependence of the linear conductance at the Kondo valley, the Kondo temperature T-K was determined to be similar to 81K. This is the highest TK ever reported for artificial quantum nanostructures. The observed very high TK is due to strong QD-electrode coupling and large charging/orbital-quantization energies in the present self-assembled InAs QD structures. (C) 2008 Elsevier B.V. All rights reserved.