In-situ gallium-assisted deoxidation of ex-situ patterned GaAs (10 0) substrates has been investigated, and compared with the more conventionally used hydrogen-assisted deoxidation. A total of 6-8 ML of gallium supplied at a substrate temperature of 420-460 degrees C has been shown to remove the surface oxide without significantly damaging shallow electron-beam patterned holes. These holes, similar to 20 nm deep and similar to 100 nm wide, have then been successfully used to control the nucleation site of single InAs quantum dots. (C) 2008 Elsevier B.V. All rights reserved