GaAs1-xBix light emitting diodes have been grown and characterized. The p-i-n structure uses a 100 nm intrinsic layer with a central 50 nm GaAs1-xBix light emitting layer with 1.8% bismuth. The diodes showed peaks in the electroluminescence (EL) emission at 987 nm from the GaAs1-xBix and 870 nm from the GaAs. The wavelength of the peak in the EL from the GaAs1-xBix was independent of temperature in the range 100-300 K while the GaAs peak shifted with temperature as expected. Photoluminescence measurements on the same p-i-n structure show temperature dependence of the peak wavelength similar to the temperature dependence of GaAs. (C) 2009 Elsevier B.V. All rights reserved.