Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide

Oktyabrsky S; Tokranov V; Koveshnikov S; Yakimov M; Kambhampati R; Bakhru H; Moore R; Tsai W

Journal of Crystal Growth, Vol.311, No.7, 1950-1953, 2009

DOI10.1016/j.jcrysgro.2008.11.037 Export Citation

Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide

Oktyabrsky S, Tokranov V, Koveshnikov S, Yakimov M, Kambhampati R, Bakhru H, Moore R, Tsai W

With the goal to demonstrate feasibility of high-mobility buried channel, we used in-situ high-k deposition approach and show for the first time operational MOSFET with buried HfO2/In0.52Al0.48 As/In0.53Ga0.47As/InP channel with mobility 1800 cm(2)/V-s at 3 x 10(12) cm(-2) and e-mode operation. Interface properties are compared with a similar gate stack with 2 monolayer thick InGaAs "passivation" layer between InAlAs and the oxide. The latter gate stack has shown significantly improved gate control and ON/OFF ratio due to reduction of the interface state density. (C) 2008 Elsevier B.V. All rights reserved.

Keywords:Interfaces;Molecular beam epitaxy;Arsenates;Oxides;Semiconducting III-V materials;Field effect transistors