The use of compound semiconductors as the channel material has recently drawn great attention because of its potential to solve the upcoming Si metal-oxide-semiconductor field effect transistor (MOSFET) scaling problem for device beyond 22 nm node. In this work, a method of fabricating inversion-channel enhancement-mode GaAs n-MOSFET by incorporating molecular beam epitaxy regrown source and drain regions is demonstrated. By using regrown contact layers to avoid high-temperature processes and, thus, preserve the integrity of the oxide-semiconductor interface, the structure allows the fabrication of self-aligned III-V-based MOSFET. The fabricated n-channel enhancement-mode GaAs MOSFET with a 4 mu m gate length shows a record high transconductance of 75 mS/mm. (C) 2008 Elsevier B.V. All rights reserved.