Journal of Crystal Growth, Vol.311, No.7, 2109-2112, 2009
Wide band gap II-VI selenides for short wavelength intersubband devices
In this paper, we present our recent progress towards the realization of short wavelength intersubband devices with wide band gap II-VI selenide semiconductors. Intersubband electroluminescence at 4.8 mu m was observed in a ZnCdSe/ZnCdMgSe quantum cascade structure at temperatures up to room temperature. We also developed a new ZnCdSe/MgSe quantum structure with metastable MgSe barriers. Intersubband absorption in the 3-5 mu m range was observed. Calculations suggest that with this structure intersubband transitions as short as 1.55 mu m may be achieved. (C) 2008 Elsevier B.V. All rights reserved.
Keywords:Molecular beam epitaxy;MgSe;ZnCdSe;ZnCdMgSe;Semiconducting II-VI materials;Infrared devices