Epitaxial growth of fluoride quantum well structure of CaxSr1-xF2/CdF2/CaxSr1-xF2 on Ge(1 1 1) is investigated. The two-step growth method was found to be useful for growth of the initial CaxSr1-xF2 layer on Ge(1 1 1) in which CaxSr1-xF2 was deposited at room temperature followed by in situ annealing for solid phase epitaxy, The quantum well structures composed of triple fluoride layers on Ge(1 1 1) substrates were superior to conventional ones grown on Si(1 1 1) substrate, due to the less chemical reactivity of CdF2 with Ge than that with Si. (c) 2008 Elsevier B.V. All Fights reserved.