Novel UV devices on high-quality AlGaN using grooved underlying layer

Tsuzuki H; Mori F; Takeda K; Iwaya M; Kamiyama S; Amano H; Akasaki I; Yoshida H; Kuwabara M; Yamashita Y; Kan H

Journal of Crystal Growth, Vol.311, No.10, 2860-2863, 2009

DOI10.1016/j.jcrysgro.2009.01.031 Export Citation

Novel UV devices on high-quality AlGaN using grooved underlying layer

Tsuzuki H, Mori F, Takeda K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Yoshida H, Kuwabara M, Yamashita Y, Kan H

A grooved Al0.25Ga0.75N underlying layer on an AlN-coated sapphire substrate was used to grow crack free and low dislocation density Al0.25Ga0.75N to successfully realize high-performance UV A light emitters. A light-emitting diode grown on a grooved AlGaN underlying layer exhibited an output power of 12 mW at a DC current of 50 mA for a peak emission wavelength of 345 nm with an external quantum efficiency of 6.7%, which is the highest to date in this wavelength region. We also fabricated UV A laser diodes with an emission wavelength of 356 nm at a pulsed injection current of 414 mA. (C) 2009 Elsevier B.V. All rights reserved.

Keywords:Metalorganic vapor phase epitaxy;Nitrides;Gallium compounds;Semiconducting III-V materials;Laser diodes;Light-emitting diodes