We demonstrate homoepitaxial growth of GaInN/GaN-based green (500-560 nm) light emitting diodes (LEDs) on a-plane and m-plane quasi-bulk GaN prepared by hydride vapor phase epitaxy (HVPE). We find that in order to achieve an emission peak wavelength beyond 500 nm, a minimum InN-fraction of similar to 14% is needed for both, a- and m-plane quantum wells (QWs), while similar to 8% are enough for c-plane-oriented QWs. Besides increasing the InN-fraction in these non-polar QWs, widening the QW also proves to effectively shift the emission to longer wavelengths without loosing efficiency with the benefit of maintaining a low InN-fraction. (C) 2009 Elsevier B.V. All rights reserved.