Nitrified HfO2/Si substrate was used to grow GaN-based film with molecular beam epitaxy. Four-period InGaN/GaN layered structure and p/n junction were deposited on the nitrified HfO2/Si. X-ray photoelectron spectroscopy (XPS) result shows that N was effectively incorporated into the HfO2. The crystallographic relationship of the GaN/HfO2/Si is GaN(0002)parallel to HfO2(111)parallel to Si(111). Temperature-dependent photoluminescence (PL), PL peak wavelength, PL peak intensity, and PL full-width at half-maximum of the p/n junction were investigated. Light-emitting diode was fabricated from the p/n junction. Red light was emitted at low voltage and yellow light was emitted when increasing the voltage. (C) 2009 Elsevier B.V. All rights reserved.