One of the most popular refractory metals is tungsten or W. Therefore, W chemical-vapor deposition (CVD) is expected to be useful for nanotechnology applications. In some cases, the residual atoms, such as halogen and oxygen, in films may degrade their quality. The authors therefore propose (i-C3H7C5H4)(2)WH2, i.e., (i-PrCp)(2)WH2, as a new W precursor because the authors expect some advantages from the absence in this molecule of the F and 0 that exist in the popular W precursors, WF6 and W(CO2)(6). The melting point of (i-PrCP)(2)WH2 is 30 degrees C and the precursor has a high vapor pressure of 0.1 torr at 110 degrees C. The authors conducted W CVD with the (i-PrCP)(2)WH2 as a precursor and obtained conformal W thin film. The deposition rate was 69 nm/min at 750 degrees C, and the deposited film had resistivity of 2.3 x 10(-4) Omega cm. However, the deposited film included a tremendous amount of C. Therefore, investigating the possibility of reducing the C contamination is necessary. (C) 2008 American Vacuum Society.