InN films were grown on Si(100) using femtosecond pulsed laser deposition. Laser induced breakdown of ammonia was used to generate atomic nitrogen for InN growth. An indium buffer layer was initially deposited on the Si substrate at low temperature followed by an InN intermediate layer. The crystal quality and surface morphology were investigated by reflection high-energy electron diffraction during growth and atomic force microscopy and x-ray diffraction after growth. The results showed that the In(2x1) initial buffer layer improved the quality of the InN film. High quality InN films were grown at a temperature of similar to 350 degrees C.