The substrate temperature effects on the amorphous carbon film growth were investigated, by using the deposition rates and in situ and "real-time" infrared spectroscopy in multiple internal reflection geometry. The deposition rates were decreased, in contrast with the increases of substrate temperature. The growth mode was also changed with substrate temperatures: the film growth depends on the gas phase reaction at low substrate temperature; on the other hand, at high temperature the film grows with the decomposition of the CH3 species.