In the present work, we numerically modeled the processes of exposure and development of the CAMP6 chemically amplified resist during electron-beam lithography. The radial distributions of the absorbed electron energy in the resist for a zero-width delta-function 30 keV electron beam are obtained by Monte Carlo simulation. These distributions (discrete data) are approximated by an analytical function (sum of double Gaussian and an exponential function). The values of the parameters of the function are calculated using an original Monte Carlo technique, and their dependencies on the resist thickness (d=100, 200, 600, 1000, and 1500 nm) at two resist depths are presented. Using these parameters' values, we performed a computer simulation of the process of developing the resist taking into account its peculiarities due to the complicated mechanism of resist removal from soluble resist areas. We obtained profiles at various development times of a single 100 nm line. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3043467]