The authors have demonstrated the novel CdTe x-ray imaging device that consists of it Schottky CdTe diode and a 12 X 12 matrix-structured field emitter array (FEA). The Schottky CdTe diode was fabricated by depositing In on it Cl-doped p-type (pi-type) CdTe substrate and Sb2S3 on the opposite side of the CdTe substrate. The matrix-structured FEA was fabricated by reactive ion etching and etch-back method. The output current was successfully detected by the recombination of holes with electrons from the FEA, and clearly depended on the x-ray intensity. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3079651]