In this work, Al/PbZr0.53Ti0.47O3(PZT)/n(+)-polysilicon/Y2O3/Si (MFPIS) capacitors and transistors were fabricated. A n(+)-polysilicon floating gate was used to reduce the depolarization field of the ferroelectric layer. The gate leakage current density was as low as 1.68x10(-10) A/cm(2) at 5 V. The I-DS-V-GS memory window shows a maximum of 2.5 V at a sweeping V-GS voltage range of 9 V. The subthreshold slope is 169 mV/decade. The I-DS-V-GS on and off ratio of MFPIS field effect transistor was about 10(4). The MFPIS field effect transistors maintained a threshold voltage window of about 1.6 V after an elapsed time of 10(4) s.