화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.27, No.5, L25-L27, 2009
Effects of Ga+ milling on InGaAsP quantum well laser with mirrors milled by focused ion beam
InGaAsP/InP quantum well ridge waveguide lasers were fabricated for the evaluation of Ga+ focused ion beam milling of mirrors. Electrical and optical properties were investigated. A 7% increment in the threshold current, a 17% reduction in the external quantum efficiency, and a 15 nm blueshift in the emission spectrum were observed after milling as compared to the as-cleaved facet result. Annealing in inert atmosphere partially reverts these effects, resulting in a 4% increment in the threshold current, an 11% reduction in the external efficiency, and a 13 nm blueshift with the as-cleaved result. The current-voltage behavior after milling and annealing shows a very small increase in leakage current, indicating that optical damage is the main effect of the milling process. (C) 2009 American Vacuum Society. [DOI:10.1116/1.3207741]