A novel model-based algorithm provides a capability to control full chip design specific variation in pattern transfer caused by via/contact etch processes. This physics-based algorithm is capable of detecting and reporting hot spots based on the fab defined thresholds of acceptable variations in the critical dimension of etched shapes. It can also be used as a tool for etch process optimization to capture the impact of a variety of patterns presented in a particular design. A realistic set of process parameters employed by the developed model allows using this novel via-contact etch electronic design automation tool for the design-aware process optimization in addition to the "standard" process-aware design optimization. Measurements of the postetch geometries of contact holes etched in the organosilicate glass with fluorocarbon plasma (C4F8/N-2/Ar) are used for model validation and calibration.