Using high quality, anisotropically etched Si waveguides bonded to InGaAsP, the authors demonstrate a hybrid laser, whose optical profile overlaps both Si and III-V regions. Continuous wave laser operation was obtained up to 45 degrees C, with single facet power as high as 12.7 mW at 15 degrees C. Planar Si optical resonators with Q=4.8x10(6) are also demonstrated. By using a SF6/C4F8 reactive ion etch, followed by H2SO4/HF surface treatment and oxygen plasma oxide, the optical losses due to the waveguide and the bonding interface are minimized. Changes of optical confinement in the silicon are observed due to waveguide width variation.