This work explores several options for the channel-stop implant and source/drain doping for bulk trigate transistors using three-dimensional atomistic simulation. Considering tight silicon fin spacing and difficulty of using conventional ion implantation for the source/drain doping, the authors model both the implantation and plasma doping options. Considering the size of silicon fin and a handful of dopant atoms at play, the kinetic Monte Carlo approach offers a natural way of investigating atomistic effects and device variability. Atomistic device simulation provides an insight into the impact of different doping options on performance and variability of the trigate transistors. The provided insight is instrumental in selecting the best doping options and optimizing the tradeoff between performance and variability.