The authors have theoretically investigated the cooling effect of field emission from n-type semiconductors. By considering the outgoing and incoming electrons in the region of emission, they make the numerical calculation of the energy exchange per field electron. It is found that even though the Joule heat is taken into account, the energy exchange is large enough for cooling the cathode. The cooling power sufficient for microelectronic device is obtained for field emission from the highly n-doped Si semiconductor.