The authors have investigated the performance of focused ion-beam (FIB) direct-write lithography for large area (multiple write-field) patterning in an FEI Nova Nanolab 600 dual-beam microscope. Their system is configured with a 100 nm resolution X-Y stage and a RAITH ELPHY LITHOGRAPHY control interface, with its own integrated 16 bit DAC pattern generator and software. Key issues with regard to configuration, process parameters, and procedures have been addressed. Characterization of stitching errors, pattern repeatability, and drift were performed. Offset lithography (multiple exposures with offset write fields) and in-field registration marks were evaluated for correcting stitching errors, and a test microfluidic device covering an area of 1 x 1.4 mm(2) was successfully fabricated. The authors found that by using a combination of offset lithography and in-field registration mark correction methods, the stitching errors can be kept well below 100 nm. They also found that due to higher beam deflection speed provided by the electrostatic scanning in FIB systems versus the wide-spread electron-beam systems with electromagnetic scanning, FIB lithography can be just as fast as electron-beam lithography for typical mill depths down to about 200-500 nm (material dependent). This opens the door for a large suite of applications for materials where pattern transfer is difficult or impossible by reactive methods. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3308974]