This study fabricates and characterizes ultraviolet (UV) photosensors with ZnO nanorods (NRs). The NR arrays were selectively grown in the gap between interdigitated (IDT) electrodes of devices using hydrothermal solution processes and a lithography-based technique. Compared with a conventional ZnO photosensor without NRs, the proposed UV NR photosensors have Much higher photoresponse in the UV region, Additionally, the photoconductive gain of ail NR photosensor increased as UV illumination time increased, it varied at 34.45-5.32 x 10(2) under illumination by 18.28 mW/cm(2) optical power. Consequently, the substantial photoconductive gain call be attributed to high surface-to-volume ratio of ZnO NRs. The high density or hole-trap states oil NR surfaces lead to it persistent photoconductivity (PPC) state, promoting the transport of carriers through devices.