Materials Chemistry and Physics, Vol.108, No.2-3, 176-178, 2008
Morphology variation in growth process of InN pillar crystal films on Si (100) substrate by halide chemical vapor de position under atmospheric pressure
The morphology variation in growth process of InN films on Si (10 0) substrate by means of AP-HCVD investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray pole-figure. These results imply that the InN pillar crystal is grown perpendicular to Si (10 0) substrate with increasing growth time. (c) 2007 Elsevier B.V. All rights reserved.