Cuprous oxide films were deposited on glass substrates using dc magnetron sputtering technique by sputtering of pure copper target in a mixture of argon and oxygen atmosphere under various sputtering powers in the range 0.38-1.50 W cm(-2). The influence of sputtering power on the structural, electrical and optical properties was systematically studied. The films were polycrystalline in nature with cubic structure. The films formed at sputtering powers <= 0.76 W cm(-2) exhibited mixed phase of Cu2O and CuO while those formed at 1.08 W cm(-2) were single phase Cu2O. The single-phase Cu2O films formed at a sputtering power of 1.08 W cm(-2) showed electrical resistivity of 46 Omega cm, Hall mobility of 5.7 cm(2) V-1 s(-1) and optical band gap of 2.04 eV. (C) 2008 Elsevier B.V. All rights reserved.