By using Na2TeO3 and Na2S2O3 as starting materials, tellurium nanowires with diameter around 25 nm were synthesized via a hydrothermal reaction at 160 degrees C, X-ray diffraction (XRD) showed that the product was a pure trigonal phase and TEM image indicated the widths of nanowires were in the range of 10-40 nm. Through further high-resolution TEM (HRTEM) analysis, a preferential growth direction along the [001] zone axis was observed. The intrinsic structure of tellurium, as well as the directing role of PVP leading to the formation of the 1D nanostructure was briefly discussed. Field effect transistor from individual nanowire was constructed, the nanowire device revealed a pronounced gating effect, and yield a threshold voltage of 40 V. an on-off ratio as high as 103, and a mobility of 163 cm(2) V-1 S-1 at V-ds = -0.1 V. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.