Tungsten disulphide has been grown by dip technique on glass substrate using sodium tungstate and thiourea as sources of tungsten and sulphide ion respectively. X-ray diffraction of as deposited thin film indicated polycrystalline character with rhombohedral phase. Optical study shows a direct band gap nature with band gap energy 1.4eV. Conductivity measurement showed a semi conductor-type temperature dependence characterized by activation energy 0.659 eV. (C) 2009 Elsevier B.V. All rights reserved.