Zr-Ti-N film prepared by sputtering deposition has been employed as a potential diffusion barrier for Cu metallization. it is thought that the existing states of Ti and Zr in the films are Ti-N and Zr-N phase in Zr-Ti-N films. Material analysis by XRD, XPS and sheet resistance measurement reveal that the failure of Zr-N film is mainly due to the formation Of Cu3Si precipitates at the Zr-N/Si interface by Cu diffusion through the grain boundaries or local defects of the Zr-N barrier layer into Si substrate. In conjunction with sheet resistance measurement, XRD and XPS analyses, the Cu/Zr-Ti-N/Si contact system has high thermal stability at least up to 700 degrees C The incorporation of Ti atoms into Zr-N barrier layer was shown to be beneficial in improving the thermal stability of the Cu/barrier/Si contact system. (C) 2009 Elsevier B.V. All rights reserved.