The morphological and optical properties of indium tin oxide (ITO) thin films deposited by an ultralow-pressure dc magnetron sputtering (ULPS) method followed by postannealing treatment at 250 degrees C are reported. The surface roughness of the film (R-rms: 0.5 nm) deposited using ULPS was about 5 times lower than that of the film (R-rms: 2.7 nm) sputtered using a pressure of 6.7x10(-1) Pa. ITO thin films with a low resistivity of 3.7x10(-4) Omega cm were also achieved using a continuous two-step deposition process, in which the initial layer was deposited using ULPS and then the final layer was deposited with a SP of 6.7x10(-1) Pa, without the use of any other additional steps. Both the ULPS and continuous two-step deposition methods were found to be effective for producing ITO thin films with enhanced morphologies that make them suitable for use in display devices.