In this paper, we demonstrate excellent material characteristics of TiPrO and high-density TixPr1-xO (x approximate to 0.67) metal-insulator-metal (MIM) capacitors using high-work-function (similar to 5.3 eV) Ir top electrode. Low leakage current of 7x10(-9) A/cm(2) at -1 V and high 16 fF/mu m(2) capacitance density are achieved for 400 degrees C anneal TiPrO, which also meets the International Technology Roadmap for Semiconductors goals (at year 2018) of 10 fF/mu m(2) density and J/(CV)< 7 fA/(pFV). Furthermore, the improved high 20 fF/mu m(2) capacitance density TiPrO MIM was obtained at a higher anneal temperature, where a low leakage current of 1.2x10(-7) A/cm(2) was measured at -1 V. These good performances indicate that TiPrO MIM is suitable for analog/radio frequency integrated circuits.