Deal-Grove oxidation rate constants for the controlled combustion-based radical oxidation of silicon wafers in a batch reactor were determined, thus providing insight into the rate-limiting factors. Re-examination of the oxidation rates of wafers with different crystal orientations provides an estimate of the enhancement of the linear rate constant in radical oxidations as compared to standard wet and dry oxidation processes. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3095468] All rights reserved.