Al-Ni alloys for single-layer interconnections to be used for amorphous silicon thin-film transistors (a-Si TFTs) in liquid-crystal displays have been developed. The developed interconnections make possible a direct electrical contact with an indium-tin oxide (ITO) film without barrier metals, such as Mo and Cr, which are conventionally used for the electrical contacts. In the present paper, we investigated the major current path at the contact between ITO film and the Al-Ni alloy layer using nanoprobes. It was found that the Al3Ni precipitations between the ITO film and the Al-Ni alloy layer played an important role of electrically conducting contacts. This led us to a conclusion that it is important to increase local current paths via Al3Ni precipitations to achieve a low resistivity at the contact between the ITO film and the Al-Ni alloy layer, which was found to be strongly influenced by the photoresist stripping process successively used for the formation of SiN contact holes in the production of a-Si TFTs. (C) 2009 The Electrochemical Society. (C) [DOI: 10.1149/1.3097196] All rights reserved.