A method for controlling the direction of Si etch profiles was developed using a Faraday cage system and a conventional gas-chopping process. The gas-chopping process consisted of sequentially alternating etching and deposition steps using SF6 and C4F8 plasmas, respectively. The single-directional oblique etching was achieved using a Faraday cage having a top horizontal grid plane, inside of which a tilted substrate holder was placed. The double-directional etching was also obtained using a cage having two slanted grid planes. The double-directional etch profiles were either symmetrically or asymmetrically oblique according to the angle of the sample holder. During the oblique-directional etching, the shadowing effect by the bombardment of tilt-angled ions was found to affect etch profiles. Due to the shadowing effect, the top width of the pattern and the etch depth decreased as the ion-incident angle increased, and a fluorocarbon film accumulated in the shadow area. By regulating the process conditions to allow a higher mask selectivity, an oblique Si etch profile with a high aspect ratio (etch depth = 5700 nm and aspect ratio = 9.5) was obtained. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3122623] All rights reserved.