The 30 nm thick Bi2Mg2/3Nb4/3O7 (BMN)(O)/200 nm thick BMN(Ar)/30 nm thick BMN(O) multilayer capacitors were prepared on Pt/TiO2/SiO2/Si substrates at room temperature by radio-frequency magnetron sputtering to improve both the dielectric constant and leakage current characteristics. The BMN(Ar) percolative capacitors and BMN multilayer capacitors show a dielectric constant of approximately 150 and 63 and dissipation factors of 0.08 and 0.02, respectively, at 100 kHz. The percolative capacitors show a large dispersion of the dielectric properties, while multilayer capacitors show a stable dielectric property as a function of frequency. The leakage current density of the multilayer capacitors shows 1 order of magnitude lower than that of the percolative capacitors. The conduction mechanism of the BMN multilayer films was mainly controlled by a Schottky emission having Schottky barrier heights of about 0.08-0.14 eV. The leakage current characteristics of the BMN percolative films were improved by an appropriate insertion of the BMN(O) interfacial layer at both sides of the BMN percolative films.